Product Summary

The JAN2N2219A is an NPN switching silicon transistor.

Parametrics

JAN2N2219A absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 50 Vdc; (2)Collector-Base Voltage, VCBO: 75 Vdc; (3)Emitter-Base Voltage, VEBO: 6.0 Vdc; (4)Collector Current, IC: 800 mAdc; (5)Total Power Dissipation @ TA = +25℃, PT: 0.8W; @ TC = +25℃, PT: 3.0 W; (6)Operating & Storage Junction Temp. Range, Top, Tstg: -55 to +200℃.

Features

JAN2N2219A features: (1)Collector-Emitter Breakdown Voltage, IE = 10 mAdc, V(BR)CEO: 50Vdc; (2)Emitter-Base Cutoff Current, VEB = 6.0 Vdc, IEBO: 10ηAdc; (3)Collector-Base Cutoff Current, mVCE = 50 Vdc, ICES: 10ηAdc.

Diagrams

JAN2N2219A block diagram

JAN2N2222
JAN2N2222

Other


Data Sheet

Negotiable 
JAN2N2222A
JAN2N2222A

Other


Data Sheet

Negotiable 
JAN2N2369
JAN2N2369

Other


Data Sheet

Negotiable 
JAN2N2369A
JAN2N2369A

Other


Data Sheet

Negotiable 
JAN2N2608
JAN2N2608

Other


Data Sheet

Negotiable 
JAN2N2905A
JAN2N2905A

ON Semiconductor

Transistors Bipolar (BJT) JAN2N2905A

Data Sheet

0-1: $6.78
1-25: $5.56
25-100: $5.01
100-250: $4.61