(China (Mainland))
Product Summary
The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up 250 MHz.
Parametrics
SD2932 absolute maximum ratings: (1)V(BR)DSS, Drain Source Voltage: 125 V; (2)VDGR, Drain-Gate Voltage (RGS = 1MW): 125 V; (3)VGS, Gate-Source Volatge: ±20 V; (4)ID, Drain Current: 40 A; (5)PDISS, Power Dissipation: 500 W; (6)Tj, Max. Operating Junction Temperature: +200 ℃; (7)TSTG, Storage Temperature: -65 to +150 ℃.
Features
SD2932 features: (1)gold metallization; (2)excellent thermal stability; (3)common source configuration, push pull; (4)pout = 300 w min. with 15 db gain @ 175 MHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SD2932 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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SD2932B |
STMicroelectronics |
RF Wireless Misc POWER R.F. |
Data Sheet |
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SD2932BW |
STMicroelectronics |
Transistors RF MOSFET Power HF/VHF/UHF RF N-Ch 300W 15dB 175MHz |
Data Sheet |
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SD2932W |
STMicroelectronics |
Transistors RF MOSFET Power N-Ch MOS HF/VHF/ RF 300W 15dB 175MHz |
Data Sheet |
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