Product Summary

The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up 250 MHz.

Parametrics

SD2932 absolute maximum ratings: (1)V(BR)DSS, Drain Source Voltage: 125 V; (2)VDGR, Drain-Gate Voltage (RGS = 1MW): 125 V; (3)VGS, Gate-Source Volatge: ±20 V; (4)ID, Drain Current: 40 A; (5)PDISS, Power Dissipation: 500 W; (6)Tj, Max. Operating Junction Temperature: +200 ℃; (7)TSTG, Storage Temperature: -65 to +150 ℃.

Features

SD2932 features: (1)gold metallization; (2)excellent thermal stability; (3)common source configuration, push pull; (4)pout = 300 w min. with 15 db gain @ 175 MHz.

Diagrams

SD2932 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
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SD2932B

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Data Sheet

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Data Sheet

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Data Sheet

0-1: $82.88
1-10: $76.05
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