Product Summary

The JAN2N930A is an NPN low power silicon transistor.

Parametrics

JAN2N930A absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 80 Vdc; (2)Collector-Base Voltage, VCBO: 120 Vdc; (3)Emitter-Base Voltage, VEBO: 7.0 Vdc; (4)Collector-Emitter Voltage (RBE = 10 W), VCER: 100 Vdc; (5)Collector Current, IC: 500 mAdc; (6)Operating & Storage Junction Temperature Range, TJ, Tsrg: -65 to +200℃.

Features

JAN2N930A features: (1)Forward-Current Transfer Ratio, IC = 0.1 mAdc, VCE = 10 Vdc, hFE: 20V; IC = 10 mAdc, VCE = 10 Vdc, hFE: 35V; IC = 150 mAdc, VCE = 10 Vdc, hFE: 40 120V; (2)Collector-Emitter Saturation Voltage, IC = 150 mAdc, IB = 15 mAdc, VCE(sat): 5.0Vdc; (3)Base-Emitter Voltage, IC = 150 mAdc, IB = 15 mAdc, VBE(sat) 1.3Vdc.

Diagrams

JAN2N930A block diagram

JAN2N2222
JAN2N2222
Other

Data Sheet
Negotiable 
JAN2N2222A
JAN2N2222A
Other

Data Sheet
Negotiable 
JAN2N2905A
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Data Sheet
0-1: $6.78
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Data Sheet
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ON Semiconductor
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Data Sheet
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ON Semiconductor
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Data Sheet
0-184: $3.69
184-250: $3.40
250-500: $3.10
500-1000: $2.69